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Technical parameters

Power
di/dt-通态电流上升率200A/us
dv/dt-断态电压上升率200V/us
IGT-直流门极触发电流200mA
ITSM-不可重复峰值通态电流5500A
VDRM-断态可重复峰值电压1000V
VGT-直流门级触发电压3V
VTM-通态电压峰值2.7V
Environment and package
封装类型1B23
最大工作温度125°C
最小工作温度-40°C
Other
tq-换流电路关断时间23μs
引脚数量10

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