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Technical parameters

Power
Current - Collector (Ic) (Max)1A
Power - Max20.5W
Voltage - Collector Emitter Breakdown (Max)42V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 500mA, 5V
Frequency - Transition2.3GHz
Gain8dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeChassis Mount
Operating Temperature200°C(TJ)
PackageBulk
Package / Case55BT
Supplier Device Package55BT
Other
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

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