QNHCHIP(乾能惠)China
N沟道增强型功率MOSFET，具备低导通电阻和卓越开关性能，适用于低压应用
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current20 A
On-resistance50 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 20A |
| Other | |
| 导通电阻(RDS(on)) | 50mΩ@10V |
| 数量 | 1个N沟道 |
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