Microsemi CorporationUnited States

2001

ObsoleteTransistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 2GHZ 55BT

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Technical parameters

Power
Current - Collector (Ic) (Max)250mA
Power - Max5W
Voltage - Collector Emitter Breakdown (Max)50V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 5V
Frequency - Transition2GHz
Gain9.5dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeChassis Mount
Operating Temperature-
PackageBulk
Package / Case55BT
Supplier Device Package55BT
Other
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

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