Dimensions (Unit : mm)

Dimensions (Unit : mm)

Rohm SemiconductorJapan

1SS400G

Diodes - Rectifiers - SingleVMD2

DIODE SWITCHING 80V 100MA VMD2

Rohm 1SS400G high-speed switching diode in VMD2 package, 80V reverse voltage, 100mA average rectified current, silicon epitaxial planar construction, suitable for high-speed switching applications.Checked against the datasheet

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Technical parameters

Key specs

Reverse voltage80 V
Average rectified current100 mA
Forward voltage1.2 VMax · IF=100mA，Ta=25C
TypeSwitching

Datasheet-verified parameters

14 items
ParameterValue and test conditionsSource
Reverse voltage (DC)80 V
Average rectified forward current100 mA
Forward voltageMax 1.2 V @ IF=100mA, Ta=25C
Diode typeSwitching Diode
PackageVMD2
Junction temperatureMax 150 °C
Storage temperature-55 to +150 °C
Reverse voltage (repetitive peak)90 V
Forward current (repetitive peak)225 mA
Surge current (1S)500 mA
Reverse currentMax 100 nA @ VR=80V, Ta=25C
Capacitance between terminalMax 3.0 pF @ VR=0.5V, f=1.0MHz, Ta=25C
Reverse recovery timeMax 4.0 ns @ VR=6V, IF=10mA, RL=100Ω, Ta=25C
ConstructionSilicon epitaxial planer
All parameters (6)ExpandCollapse
Power
Average rectified forward current100 mA
Forward voltage1.2 V (Max)
Reverse voltage (DC)80 V
Environment and package
Junction temperature150 °C
PackageVMD2
Other
Reverse recovery time4.0 ns (Max)

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DatasheetDatasheet · 410.7 KB · 2026-10-26
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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.