BORN(伯恩半导体)China

1SMB5934B

ActiveSwitching Diodes
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Technical parameters

IZT(mA)15.6
P.D.(W)3
VZ (Max.)@IZT (V)25.2
VZ (Min.)@IZT (V)22.8
VZ (Nom.)@IZT (V)24

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