GeneSiC SemiconductorUnited States
DIODE SCHOTTKY 20V 25A DO4
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Technical parameters
Key specs
Reverse voltage20 V
Average rectified current25 A
Forward voltage580 mVMax · 25 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 25A |
| Current - Reverse Leakage @ Vr | 2 mA @ 20 V |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 25 A |
| Environment and package | |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Supplier Device Package | DO-4 |
| Other | |
| Base Product Number | 1N5829 |
| Capacitance @ Vr, F | - |
| Diode Type | Schottky |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |