Microchip TechnologyUnited States
RECTIFIER DIODE
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Technical parameters
Key specs
Reverse voltage150 V
Average rectified current20 A
Forward voltage950 mVMax · 20 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 20A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Supplier Device Package | DO-203AA (DO-4) |
| Other | |
| Base Product Number | 1N5816 |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Diode Type | Standard |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |