Goford SemiconductorTaiwan, China
MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-220 |
| Other | |
| Ciss (pF) | 836 |
| Compliance | RoHS,Halogen Free |
| Crss (pF) | 3.81 |
| ESD Diode | NO |
| Id (A) | 18 |
| Pd (W) | 110 |
| Qgd (nC) | 5.2 |
| Qg (nC) | 17.7 |
| Qgs (nC) | 3.9 |
| Rds(on) mΩ(max) @Vgs=10V | 160 |
| Rds(on) mΩ(typ) @Vgs=10V | 136 |
| Technology | PLANAR |
| Type | N |
| Vds (V) | 200 |
| Vgs(th) max(V) | 3 |
| Vgs (V) | ±20 |