Goford SemiconductorTaiwan, China
MOSFET
All alternatives
View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-252 |
| Other | |
| Ciss (pF) | 847 |
| Compliance | Automotive,RoHS,Halogen Free |
| Crss (pF) | 13 |
| ESD Diode | NO |
| Id (A) | 18 |
| Pd (W) | 65.8 |
| Qgd (nC) | 5.3 |
| Qg (nC) | 18 |
| Qgs (nC) | 4 |
| Rds(on) mΩ(max) @Vgs=10V | 190 |
| Rds(on) mΩ(typ) @Vgs=10V | 129 |
| Technology | PLANAR |
| Type | N |
| Vds (V) | 200 |
| Vgs(th) max(V) | 3 |
| Vgs (V) | ±20 |