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PJSEMI(平晶微)China

13001SQ

Bipolar Transistors - Unspecified Type

NPN,VCEO:420V,IC:0.15A,PD:0.55W,VCE(SAT):1.05V(MAX.),HFE:15-25

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage420 V
Collector current150 mAMax
Power550 mWMax
Power
集射极击穿电压(Vceo)420V
集电极电流(Ic)150mA
Other
晶体管类型NPN
耗散功率(Pd)550mW

Documents

DatasheetDatasheet · 6.8 MB · 2026-09-21DatasheetDatasheet · 1.5 MB · 2026-09-21DatasheetDatasheet · 776.1 KB · 2026-09-21DatasheetDatasheet · 771.6 KB · 2026-09-21DatasheetDatasheet · 432.1 KB · 2026-09-21DatasheetDatasheet · 432.0 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 421.5 KB · 2026-09-21DatasheetDatasheet · 417.8 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 240.7 KB · 2026-09-21
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