MDDGermany
Transistors 三极管 · general purpose small signal bipolar transistors
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Junction Temperature | -55 to 150℃ |
| 封装类型 | SOT-23 |
| Other | |
| BVCBO (V) | 600 |
| BVCEO (V) | 400 |
| BVEBO (V) | 7 |
| hHE (Max) | 30 |
| hHE (Min) | 15 |
| IC (mA) | 200 |
| PCM (mW) | 350 |
| Polarity | NPN |
| VBE(sat) (V) | 1.5 |
| VCE(sat) (V) | 0.5 |
| 数量 函数 | Single |
| 零件编号 | 13001 |