DIODE GEN PURP 1KV 10A R-6
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View full reportTechnical parameters
Key specs
Reverse voltage1 kV
Average rectified current10 A
Forward voltage1.1 VMax · 10 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~200°C |
| Package | Bulk |
| Package / Case | R-6, Axial |
| Supplier Device Package | R-6 |
| Other | |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
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