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Cross references for TBD62003AFWG(Z,EHZ

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Toshiba Semiconductor and StorageTBD62003AFWG(Z,EHZ
导通电阻(RDS(on))3.25Ω@5V,350mA漏源电压(Vdss)50V耗散功率(Pd)1.25W连续漏极电流(Id)500mA