Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.

This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 30A ensures robust performance in high-power applications. The reverse leakage current is minimized to 9 µA, providing excellent efficiency and reliability. This dual SiC diode in a parallel configuration ensures enhanced current handling and improved thermal performance for demanding power systems. mSiC diodes in a SOT-227 package are designed for high-power applications requiring exceptional thermal performance and reliability.

The SOT-227 package features a robust, isolated baseplate that ensures excellent heat dissipation. With the inherent advantages of SiC technology, the SOT-227 package supports higher current ratings and superior thermal cycling capabilities. Its modular design allows for easy parallel configurations and integration into high-power systems, providing a durable, efficient, and scalable solution for advanced energy applications.

Cross references for MSC2X31SDA120J-DIODE