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Cross references for G5S12016B

G5S12016B
Original
Global Power Technology-GPTG5S12016B
Current - Average Rectified (Io) (per Diode)27.9A (DC)Current - Reverse Leakage @ Vr50 µA @ 1200 VDiode Configuration1 Pair Common CathodeDiode TypeSilicon Carbide Schottky