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Cross references for
G3S12002H
Original
GL
Global Power Technology-GPT
G3S12002H
Capacitance @ Vr, F
136pF @ 0V, 1MHz
Current - Average Rectified (Io)
7.3A
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Diode Type
Silicon Carbide Schottky
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