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Cross references for G3S12002C

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Global Power Technology-GPTG3S12002C
Capacitance @ Vr, F170pF @ 0V, 1MHzCurrent - Average Rectified (Io)8.8ACurrent - Reverse Leakage @ Vr50 µA @ 1200 VDiode TypeSilicon Carbide Schottky