TT8M2TR

不推荐用于新设计晶体管 - FET,MOSFET - 阵列

MOSFET N/P-CH 30V/20V 2.5A TSST8

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C2.5A
Drain to Source Voltage (Vdss)30V, 20V
Power - Max1.25W
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package8-TSST
其他
Base Product NumberTT8M2
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
MfrRohm Semiconductor
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs90mOhm @ 2.5A, 4.5V
Series-
Vgs(th) (Max) @ Id1.5V @ 1mA

技术资料