MOSFET 2P-CH 15V 1.17A 8-SOIC

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C1.17A
Drain to Source Voltage (Vdss)15V
Power - Max840mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-40°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberTPS1120
FET FeatureLogic Level Gate
FET Type2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 10V
Series-
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料

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