GANFET N-CH 650V 16A TO220AB
沟道N 沟道
耐压650 V
连续漏极电流16 A
导通电阻180 mΩ
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沟道N 沟道
耐压650 V
连续漏极电流16 A
导通电阻180 mΩ最大 · 10A
阈值电压2.6 V最大 · 500μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 81W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| 其他 | |
| Base Product Number | TPH3206 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
| Mfr | Transphorm |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| Series | - |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |