沟道P 沟道
耐压100 V
连续漏极电流9 A
导通电阻170 mΩ
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沟道P 沟道
耐压100 V
连续漏极电流9 A
导通电阻170 mΩ最大 · 4.5A
阈值电压4 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 19W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| 其他 | |
| Base Product Number | TJ9A10 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 10V |
| Series | U-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
技术资料
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