STY100NS20FD

停产晶体管 - FET,MOSFET - 单TO-247-3

MOSFET N-CH 200V 100A MAX247

沟道N 沟道
耐压200 V
连续漏极电流100 A
导通电阻24 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流100 A
导通电阻24 mΩ最大 · 50A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)450W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageMAX247™
其他
Base Product NumberSTY100
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7900 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs24mOhm @ 50A, 10V
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料