MOSFET N-CH 30V 20A 8SO
沟道N 沟道
耐压30 V
连续漏极电流20 A
导通电阻4.7 mΩ
全部替代型号
查看完整报告已收录 5 个替代型号，登录后查看。
技术参数
沟道N 沟道
耐压30 V
连续漏极电流20 A
导通电阻4.7 mΩ最大 · 10A
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.7W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| 其他 | |
| Base Product Number | STS20 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 10A, 10V |
| Series | DeepGATE™, STripFET™ VI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |