MOSFET 2N-CH 30V 10A 8SOIC
全部替代型号
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技术参数
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2.5W |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| 其他 | |
| Base Product Number | STS10 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
| Mfr | STMicroelectronics |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5A, 10V |
| Series | STripFET™ V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
器件图片
技术资料
数据手册数据手册 · 767.5 KB · 2026-09-22应用笔记应用笔记 · 4.8 MB · 2026-09-22应用笔记应用笔记 · 1.8 MB · 2026-09-22用户手册用户手册 · 1.5 MB · 2026-09-22应用笔记应用笔记 · 1.5 MB · 2026-09-22应用笔记应用笔记 · 1.1 MB · 2026-09-22应用笔记应用笔记 · 776.6 KB · 2026-09-22应用笔记应用笔记 · 659.9 KB · 2026-09-22应用笔记应用笔记 · 347.0 KB · 2026-09-22宣传资料宣传资料 · 305.2 KB · 2026-09-22应用笔记应用笔记 · 139.2 KB · 2026-09-22
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