MOSFET N-CH 800V 12A I2PAKFP
沟道N 沟道
耐压800 V
连续漏极电流12 A
导通电阻450 mΩ
全部替代型号
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技术参数
沟道N 沟道
耐压800 V
连续漏极电流12 A
导通电阻450 mΩ最大 · 6A
阈值电压5 V最大 · 100μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 35W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-262-3 Full Pack, I²Pak |
| Supplier Device Package | I2PAKFP (TO-281) |
| 其他 | |
| Base Product Number | STFI13N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 6A, 10V |
| Series | MDmesh™ K5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
器件图片
技术资料
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