SPS02N60C3BKMA1

SPS02N60C3BKMA1

停产单 FET,MOSFETPG-TO251-3-11

LOW POWER_LEGACY

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沟道N 沟道
耐压600 V
连续漏极电流1.8 A
导通电阻3 Ω

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流1.8 A
导通电阻3 Ω最大 · 1.1A
阈值电压3.9 V最大 · 80μA
电源
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)25W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackagePG-TO251-3-11
其他
Base Product NumberSPS02N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
MfrInfineon Technologies
Product StatusObsolete
Rds On (Max) @ Id, Vgs3Ohm @ 1.1A, 10V
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 80µA

器件图片

技术资料