MOSFET N-CH 650V 1.8A TO251-3
沟道N 沟道
耐压650 V
连续漏极电流1.8 A
导通电阻3 Ω
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技术参数
沟道N 沟道
耐压650 V
连续漏极电流1.8 A
导通电阻3 Ω最大 · 1.1A
阈值电压3.9 V最大 · 80μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 25W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | PG-TO251-3-11 |
| 其他 | |
| Base Product Number | SPS02N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |