SI4330DY-T1-E3

FET,MOSFET 阵列

MOSFET 2N-CH 30V 6.6A 8SOIC

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C6.6A
Drain to Source Voltage (Vdss)30V
Power - Max1.1W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberSI4330
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
ManufacturerVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusObsolete
Rds On (Max) @ Id, Vgs16.5mOhm @ 8.7A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

技术资料

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