SH8M13GZETB

SH8M13GZETB

不推荐用于新设计晶体管 - FET,MOSFET - 阵列

MIDDLE POWER MOSFET SERIES (DUAL

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C6A, 7A
Drain to Source Voltage (Vdss)30V
Power - Max2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
其他
Base Product NumberSH8M13
FET Feature-
FET TypeN and P-Channel
Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
MfrRohm Semiconductor
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs29mOhm @ 7A, 10V
Series-
Vgs(th) (Max) @ Id2.5V @ 1mA

器件图片

技术资料