SH8K32GZETB

SH8K32GZETB

不推荐用于新设计晶体管 - FET,MOSFET - 阵列

4V DRIVE NCH+NCH MOSFET. COMPLEX

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Drain to Source Voltage (Vdss)60V
Power - Max1.4W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
其他
Base Product NumberSH8K32
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 10V
MfrRohm Semiconductor
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs65mOhm @ 4.5A, 10V
Series-
Vgs(th) (Max) @ Id2.5V @ 1mA

器件图片

技术资料