Transistors - Bipolar (BJT) - Si
类型NPN
集射极耐压25 V
集电极电流500 mA
放大倍数 hFE112
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类型NPN
集射极耐压25 V
集电极电流500 mA最大
放大倍数 hFE11250mA
功率625 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA |
| Current - Collector (Ic) (Max) | 500 mA |
| Power - Max | 625 mW |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 112 @ 50mA, 1V |
| Frequency - Transition | 150MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| 其他 | |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |