DIODE GEN PURP 600V 12A DO214AB

查看国产替代问 AI FAE
反向耐压600 V
平均整流电流12 A
正向压降1.1 V
类型标准

全部替代型号

查看完整报告

技术参数

反向耐压600 V
平均整流电流12 A
正向压降1.1 V最大 · 12 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)12A
Current - Reverse Leakage @ Vr1 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 12 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C~150°C
PackageTape & Reel (TR)
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
其他
Capacitance @ Vr, F78pF @ 4V, 1MHz
Diode TypeStandard
MfrTaiwan Semiconductor Corporation
Product StatusDiscontinued at Digi-Key
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)

技术资料

该型号暂未收录资料。