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DIODE GEN PURP 1KV 5A DO214AB

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反向耐压1 kV
平均整流电流5 A
正向压降1.3 V
类型标准

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技术参数

反向耐压1 kV
平均整流电流5 A
正向压降1.3 V最大 · 5 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)5A
Current - Reverse Leakage @ Vr5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 5 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C~150°C
PackageTape & Reel (TR)
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
其他
Base Product NumberRS5M
Capacitance @ Vr, F50pF @ 4V, 1MHz
Diode TypeStandard
MfrComchip Technology
Product StatusActive
Reverse Recovery Time (trr)500 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

技术资料

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