RHK003N06T146

RHK003N06T146

不推荐用于新设计晶体管 - FET,MOSFET - 单TO-236-3

MOSFET N-CH 60V 300MA SMT3

沟道N 沟道
耐压60 V
连续漏极电流300 mA
导通电阻1 Ω

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流300 mA
导通电阻1 Ω最大 · 300mA
阈值电压2.5 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Power Dissipation (Max)200mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSMT3
其他
Base Product NumberRHK003
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds33 pF @ 10 V
MfrRohm Semiconductor
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs1Ohm @ 300mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

器件图片

技术资料