RGW80TS65HRC11

在产晶体管 - IGBT - 单

IGBT TRNCH FIELD 650V 80A TO247N

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技术参数

电源
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)160 A
Power - Max214 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-40°C~175°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247N
其他
Base Product NumberRGW80
Gate Charge110 nC
IGBT TypeTrench Field Stop
Input TypeStandard
MfrRohm Semiconductor
Product StatusActive
Series-
Td (on/off) @ 25°C42ns/148ns
Test Condition400V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 40A

技术资料