RGTH50TS65GC11

RGTH50TS65GC11

不推荐用于新设计晶体管 - IGBT - 单

IGBT TRNCH FIELD 650V 50A TO247N

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技术参数

电源
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
Power - Max174 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-40°C~175°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247N
其他
Base Product NumberRGTH50
Gate Charge49 nC
IGBT TypeTrench Field Stop
Input TypeStandard
MfrRohm Semiconductor
Product StatusNot For New Designs
Series-
Switching Energy-
Td (on/off) @ 25°C27ns/94ns
Test Condition400V, 25A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A

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技术资料

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