MOSFET N-CH 600V 2A CPT3
沟道N 沟道
耐压600 V
连续漏极电流2 A
导通电阻6.7 Ω
全部替代型号
查看完整报告已收录 2 个替代型号，登录后查看。
技术参数
沟道N 沟道
耐压600 V
连续漏极电流2 A
导通电阻6.7 Ω最大 · 1A
阈值电压4.7 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 20W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | CPT3 |
| 其他 | |
| Base Product Number | RDD022 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 25 V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 6.7Ohm @ 1A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.7V @ 1mA |
器件图片
技术资料
该型号暂未收录资料。