R6009ENXC7G

R6009ENXC7G

在产晶体管 - FET,MOSFET - 单TO-220FM

600V 9A TO-220FM, LOW-NOISE POWE

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沟道N 沟道
耐压600 V
连续漏极电流9 A
导通电阻535 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流9 A
导通电阻535 mΩ最大 · 2.8A
阈值电压4 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)48W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FM
其他
Base Product NumberR6009
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
MfrRohm Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs535mOhm @ 2.8A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

器件图片

技术资料