R6008FNX

在产单 FET,MOSFETTO-220FM

MOSFET N-CH 600V 8A TO-220FM

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沟道N 沟道
耐压600 V
连续漏极电流8 A
导通电阻950 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流8 A
导通电阻950 mΩ最大 · 4A
阈值电压4 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)50W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FM
其他
Base Product NumberR6008
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 25 V
MfrRohm Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs950mOhm @ 4A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 1mA

技术资料

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