R6007KNX

R6007KNX

在产晶体管 - FET,MOSFET - 单TO-220FM

MOSFET N-CH 600V 7A TO220FM

沟道N 沟道
耐压600 V
连续漏极电流7 A
导通电阻620 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流7 A
导通电阻620 mΩ最大 · 2.4A
阈值电压5 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)46W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FM
其他
Base Product NumberR6007
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 25 V
MfrRohm Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs620mOhm @ 2.4A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 1mA

器件图片

技术资料