MOSFET N-CH 600V 4A LPTS
沟道N 沟道
耐压600 V
连续漏极电流4 A
导通电阻980 mΩ
全部替代型号
查看完整报告已收录 4 个替代型号，登录后查看。
技术参数
沟道N 沟道
耐压600 V
连续漏极电流4 A
导通电阻980 mΩ最大 · 1.5A
阈值电压4 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 40W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPTS |
| 其他 | |
| Base Product Number | R6004 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 1.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |