R1275NC18M | Distributed Gate Capsule Type Series Fast Thyristors
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| 环境与封装 | |
|---|---|
| Package Type | W11 |
| 其他 | |
| I 2 t [Thy] (A 2 s) | 1.20 x 10⁶ |
| I TAV @ Tk=55 °C (A) | 1275 |
| I TSM 10ms Half Sine Wave (A) | 15500 |
| Q rr (µC) | 940 |
| r S (mΩ) | 0.342 |
| R thJK 180 °C Sine Wave (K/W) | 0.024 |
| T q (µs) | 70 |
| V 0 (V) | 1.207 |
| V DRM (V) | 1800 |
| V RRM (V) | 1800 |