MOSFET N/P-CH 30V 4A TSMT8
全部替代型号
查看完整报告已收录 1 个替代型号，登录后查看。
技术参数
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.5W |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |
| 其他 | |
| Base Product Number | QS8M12 |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |