MOSFET 2P-CH 12V 4.5A TSMT8
全部替代型号
查看完整报告已收录 1 个替代型号，登录后查看。
技术参数
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Power - Max | 550mW |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |
| 其他 | |
| Base Product Number | QS8J12 |
| FET Feature | Logic Level Gate, 1.5V Drive |
| FET Type | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 6V |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 4.5A, 4.5V |
| Series | - |
| Vgs(th) (Max) @ Id | 1V @ 1mA |