PJQ4443P-AU_R2_000A1

在产单 FET,MOSFETDFN3333-8

40V P-CHANNEL ENHANCEMENT MODE M

沟道P 沟道
耐压40 V
连续漏极电流8.8 ~ 46 A
导通电阻12 mΩ

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技术参数

沟道P 沟道
耐压40 V
连续漏极电流8.8 ~ 46 A
导通电阻12 mΩ最大 · 10A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 46A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.1W (Ta), 59.5W (Tc)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
QualificationAEC-Q101
Supplier Device PackageDFN3333-8
其他
Base Product NumberPJQ4443
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2767 pF @ 25 V
MfrPanjit International Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

技术资料