PEMD9,315

不推荐用于新设计双极晶体管阵列,预偏置

TRANS PREBIAS 1NPN 1PNP SOT666

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技术参数

电源
Current - Collector Cutoff (Max)1µA
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Voltage - Collector Emitter Breakdown (Max)50V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Frequency - Transition-
环境与封装
Mounting TypeSurface Mount
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-666
其他
Base Product NumberPEMD9
MfrNexperia USA Inc.
Product StatusNot For New Designs
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA

技术资料

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