onsemi美国

NVF2955T1G

在产单 FET,MOSFETSOT-223

MOSFET P-CH 60V 2.6A SOT223

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沟道P 沟道
耐压60 V
连续漏极电流2.6 A
导通电阻170 mΩ

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技术参数

沟道P 沟道
耐压60 V
连续漏极电流2.6 A
导通电阻170 mΩ最大 · 750mA
阈值电压4 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1W (Ta)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-261-4, TO-261AA
QualificationAEC-Q101
Supplier Device PackageSOT-223 (TO-261)
其他
Base Product NumberNVF2955
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds492 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs170mOhm @ 750mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

技术资料

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