NE85633-T1B-R25-A
CEL美国

NE85633-T1B-R25-A

停产双极 RF 晶体管

SAME AS 2SC3356 NPN SILICON AMPL

全部替代型号

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技术参数

电源
Current - Collector (Ic) (Max)100mA
Power - Max200mW
Voltage - Collector Emitter Breakdown (Max)12V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition7GHz
Gain11.5dB
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device Package3-MINIMOLD
其他
MfrCEL
Product StatusObsolete
Series-
Transistor TypeNPN

器件图片

技术资料