NE68519-T1-A

NE68519-T1-A

末批订购晶体管 - 双极(BJT) - RF

SAME AS 2SC5010 NPN SILICON AMPL

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技术参数

电源
Current - Collector (Ic) (Max)30mA
Power - Max125mW
Voltage - Collector Emitter Breakdown (Max)6V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA, 3V
Frequency - Transition12GHz
Gain8.5dB
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75 (USM)
其他
MfrRenesas
Product StatusLast Time Buy
Series-
Transistor TypeNPN

器件图片

技术资料

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